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| CD4010BMS November 1994 File Number 3078 CMOS Hex Buffer/Converter CD4010BMS Hex Buffer/Converter may be used as CMOS to TTL or DTL logic-level converter or CMOS high-sink-current driver. The CD4050B is the preferred hex buffer replacement for the CD4010BMS in all applications except multiplexers.The CD4010BMS is supplied in these 16 lead outline packages: Braze Seal DIP H4S Frit Seal DIP H1E Ceramic Flatpack H6W Features * Non-Inverting Type * High-Voltage Type (20V Rating) * 100% Tested for Quiescent Current at 20V * Maximum Input Current of 1A at 18V Over Full Package-Temperature Range; - 100nA at 18V and +25oC * 5V, 10V and 15V Parametric Ratings Applications * CMOS To DTL/TTL Hex Converter * CMOS Current "Sink" or "Source" Driver * CMOS High-to-Low Logic-Level Converter * Multiplexer - 1 to 6 or 6 to 1 Pinout CD4010BMS TOP VIEW Functional Diagram 3 A VCC 1 G=A 2 A3 H=B 4 B5 I=C 6 C7 VSS 8 16 VDD 15 L = F 14 F 13 NC C 12 K = E 11 E 10 J = D 9D NC VCC 8 VSS 16 VDD F 14 15 L=F 13 1 D 9 10 J=D 7 6 I=C 5 B 4 H=B 2 G=A NC = NO CONNECTION 11 E 12 K=E NC = NO CONNECTION 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 CD4010BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance. . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 11 3.5 4 1.5 V V V V MIN -100 -1000 -100 14.95 3.0 8.0 24.0 -2.8 0.7 MAX 2 200 2 100 1000 100 50 -0.2 -0.8 -0.45 -1.5 -0.7 2.8 UNITS A A A nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VOH > VOL < VDD/2 VDD/2 NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 4-2 CD4010BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 Propagation Delay TPLH VDD = 5V, VIN = VDD or GND 9 10, 11 Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 10, 11 Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL4 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 4.5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC +125oC -55oC Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55oC MIN 4.95 9.95 2.6 1.8 3.2 2.1 3.75 5.6 10.0 16.0 30.0 MAX 1 30 2 60 2 120 50 50 -0.15 -0.25 -0.58 -1.0 -0.33 -0.55 -1.1 -1.65 UNITS A A A A A A mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN MAX 130 175 200 270 70 94 350 473 UNITS ns ns ns ns ns ns ns ns PARAMETER Propagation Delay SYMBOL TPHL CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND 4-3 CD4010BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Voltage Low Input Voltage High Propagation Delay SYMBOL VIL VIH TPHL CONDITIONS VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VCC = 10V VDD = 15V, VCC = 15V Propagation Delay TPLH VDD = 10V, VCC = 10V VDD = 15V, VCC = 15V Propagation Delay TPHL VDD = 10V, VCC = 5V VDD = 15V, VCC = 5V Propagation Delay TPLH VDD = 10V, VCC = 5V VDD = 15V, VCC = 5V Transition Time TTHL VDD = 10V VDD = 15V Transition Time TTLH VDD = 10V VDD = 15V Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VNTH VPTH VPTH F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10A VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V, VCC = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 1 2.8 1 VOL < VDD/2 1.35 x +25oC Limit UNITS A V V V V V CIN Any Input NOTES 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC MIN 7 MAX 3 70 50 100 70 70 40 100 70 40 30 150 110 7.5 UNITS V V ns ns ns ns ns ns ns ns ns ns ns ns pF ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A 0.2A 20% x Pre-Test Reading 20% x Pre-Test Reading DELTA LIMIT 4-4 CD4010BMS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A, RON READ AND RECORD IDD, IOL5, IOH5A, RON IDD, IOL5, IOH5A, RON IDD, IOL5, IOH5A, RON TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD 1, 16 1, 3, 5, 7, 9, 11, 14, 16 1, 16 1, 3, 5, 7, 9, 11, 14, 16 2, 4, 6, 10, 12, 15 3, 5, 7, 9, 11, 14 9V -0.5V 50kHz 25kHz Static Burn-In 1 (Note 1) 2, 4, 6, 10, 12, 13, 15 3, 5, 7 - 9, 11, 14 Static Burn-In 2 (Note 1) 2, 4, 6, 10, 12, 13, 15 Dynamic Burn-In (Note 3) Irradiation (Note 2) NOTES: 13 2, 4, 6, 10, 12, 13, 15 8 8 8 1. Each pin except VDD and Pin 1 and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and Pin 1 and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V 3. Each pin except VDD and Pin 1 and GND will have a series resistor of 4.75K 5%, VDD = 18V 0.5V Schematic Diagram VDD CONFIGURATION: HEX COS/MOS TO DTL OR TTL CONVERTER (NON-INVERTING) P N P VCC *ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VDD * INPUT VDD GND OUTPUT N N VCC GND VSS WIRING SCHEDULE: CONNECT VCC TO DTL OR TTL SUPPLY CONNECT VDD TO COS/MOS SUPPLY VSS 4-5 CD4010BMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC COLLECTOR SUPPLY VOLTAGE (VCC) = 5V DRAIN SUPPLY VOLTAGE (VDD) = 5V OUTPUT VOLTAGE (VO) 5 VI 4 3 MIN 2 1 MAX VO OUTPUT VOLTAGE (VO) 5 AMBIENT TEMPERATURE (TA) = +25oC COLLECTOR SUPPLY VOLTAGE (VCC) = +5V DRAIN SUPPLY VOLTAGE (VDD) = +10V 4 VI 3 VO 2 MIN 1 MAX 0 1 2 3 4 5 INPUT VOLTAGE (VI) 0 2 4 6 8 10 INPUT VOLTAGE (VI) FIGURE 1. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS (VDD = 5) AMBIENT TEMPERATURE (TA) = +25oC COLLECTOR SUPPLY VOLTAGE (VCC) = +5V DRAIN SUPPLY VOLTAGE (VDD) = +15V FIGURE 2. MINIMUM AND MAXIMUM VOLATGE TRANSFER CHARACTERISTICS (VDD = 10) COLLECTOR SUPPLY VOLTAGE (VCC) = +5 SUPPLY VOLTS (VDD) = +5 5 OUTPUT VOLTAGE (VD) 5 OUTPUT VOLTAGE (VO) 4 4 = (TA) +125oC = (TA) - 55oC +10V +15V 3 MIN MAX 3 2 2 1 VI 0 2 4 6 8 10 INPUT VOLTAGE (VI) 12 VO 15 1 0 2 4 6 8 10 12 14 INPUT VOLTAGE (VI) FIGURE 3. MINIMUM AND MAXIMUM VOLATGE TRANSFER CHARACTERISTICS (VDD = 15) AMBIENT TEMPERATURE (TA) = +25oC TYPICAL TEMPERATURE COEFFICIENT FOR ID = -0.3%/oC 100 80 60 10V 40 20 5V 0 2 4 6 8 10 12 DRAIN-TO-SOURCE VOLTS (VDS) 14 GATE-TO-SOURCE VOLTAGE (VGS) = 15V FIGURE 4. TYPICAL VOLATGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC 60 50 40 30 10V 20 10 5V GATE-TO-SOURCE VOLTAGE (VGS) = 15V 0 5 10 15 20 DRAIN-TO-SOURCE VOLTS (VDS) FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 4-6 CD4010BMS Typical Performance Characteristics (Continued) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -7 -6 -5 -4 -3 -2 -1 0 -1 -2 -3 -4 -5 -10V -6 -7 -8 -15V -9 -10 -11 AMBIENT TEMPERATURE (TA) = +25oC -12 -7 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 100 100 -6 -5 -4 -3 -2 -1 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V GATE-TO-SOURCE VOLTAGE (VGS) = -5V -2 -4 -6 -8 -10 -12 -10V -15V AMBIENT TEMPERATURE (TA) = +25oC FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS LOW-TO-HIGH PROPAGATION DELAY TIME (tPLH) (ns) FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS HIGH-TO-LOW PROPAGATION DELAY TIME (tPHL) (ns) 80 70 60 50 40 30 20 10 10V 120 AMBIENT TEMPERATURE (TA) = +25oC 100 SUPPLY VOLTAGE (VDD) = 5V AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 5V 80 10V 60 15V 40 15V 20 0 20 40 60 80 100 120 LOAD CAPACITANCE (CL) (pF) 0 10 20 30 40 50 60 70 80 90 LOAD CAPACITANCE (CL) (pF) FIGURE 9. TYPICAL LOW-TO-HIGH PROPAGATION DELAYTIME vs LOAD CAPACITANCE FIGURE 10. TYPICAL HIGH-TO-LOW PROPAGATION DELAYTIME vs LOAD CAPACITANCE LOW-TO-HIGH TRANSITION TIME (tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC HIGH-TO-LOW TRANSITION TIME (tTHL) (ns) AMBIENT TEMPERATURE (TA) = +25oC 250 SUPPLY VOLTAGE (VDD) = 5V 60 SUPPLY VOLTAGE (VDD) = 5V 50 40 30 20 10 15V 200 150 10V 15V 10V 100 50 0 0 20 40 60 80 100 120 LOAD CAPACITANCE (CL) (pF) 10 20 30 40 50 60 70 80 90 LOAD CAPACITANCE (CL) (pF) FIGURE 11. TYPICAL LOW-TO-HIGH TRANSITION TIME vs LOAD CAPACITANCE FIGURE 12. TYPICAL HIGH-TO-LOW TRANSITION TIME vs LOAD CAPACITANCE 4-7 CD4010BMS Typical Performance Characteristics (Continued) 104 POWER PER INVERTER/BUFFER (W) 8 6 4 2 AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 103 8 6 4 2 102 8 6 4 2 10V 10V 5V LOAD CAPACITANCE (CL) = 50pF CL = 15pF 10 2 4 10 102 103 INPUT FREQUENCY (f) kHz 68 2 4 68 2 4 68 104 FIGURE 13. TYPICAL DISSIPATION CHARACTERISTICS Chip Dimensions and Pad Layouts METALLIZATION: Thickness: 11kA - 14kA, AL. PASSIVATION: 10.4kA - 15.6kA, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-8 |
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